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| SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Q C K Complementary to MJD117/L. H E M Straight Lead (IPAK, "L" Suffix) P F 1 2 F 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.0 20 150 Q UNIT V V V A mA W DPAK 1. BASE 2. COLLECTOR 3. EMITTER DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B D A C I J D O -55 150 H G P C B F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX K 1. BASE 2. COLLECTOR 3. EMITTER R1 = 10k R2 = 0.6k E E B IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector Output Capacitance SYMBOL VCEO(SUS) ICEO ICBO IEBO hFE VCE(sat) VBE(ON) fT Cob TEST CONDITION IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=3V, IC=0.5A VCE=3V, IC=2A IC=2A, IB=8mA VCE=3V, IC=2A VCE=10V, IC=0.75A, f=1MHz VCB=10V, IE=0, f=0.1MHz MIN. 100 500 1,000 25 TYP. 12,000 MAX. 20 20 2 2.0 2.8 100 V V MHz pF UNIT V A mA 2003. 3. 27 Revision No : 4 1/2 MJD112/L h FE - I C 10k DC CURRENT GAIN h FE 5k 3k VCE =3V V CE(sat) ,V BE(sat) - I C 10 SATURATION VOLTAGE VCE(sat) , VBE(sat) (V) 5 3 VBE(sat) I C /I B =250 1k 500 300 1 0.5 0.3 VCE(sat) 100 0.01 0.03 0.1 0.3 1 3 5 0.1 0.01 0.03 0.1 0.3 1 3 5 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) C ob - V CB 200 CAPACITANCE C ob (pF) f=0.1MHz P C - Ta 25 POWER DISSIPATION PC (W) 20 15 10 5 2 1 1 Tc=25 C 2 Ta=25 C 100 50 30 10 1 3 5 10 30 50 0 0 50 100 150 200 COLLECTOR-BASE VOLTAGE V CB (V) CASE TEMPERATURE Ta ( C) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 I C MAX.(PULSED) * I C MAX. (CONTINUOUS) DC OPERATION Tc=25 C 10 1m 5m S* S* 0 S* * SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2003. 3. 27 Revision No : 4 2/2 |
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